Microstructure diagnostics

UHV chamber of the ToF-SIMS
© Fraunhofer CSP
In the UHV chamber of the ToF-SIMS the chemical composition of a sample is determined with the aid of ion-sputtering sources.
  • Metallography and ion beam assisted sample preparation
  • Microscopy (optical, NIR)
  • Analytical scanning electron microscopy (SEM) with EDX/EBSD, EBIC
  • Transmissin electron microscopy (SEM) with EDX/EBSD, EBIC
  • Focused ion beam (FIB)
  • Time-of-flight secondary ion mass spectrometry (ToF-SIMS)
  • X-ray photoelectron spectroscopy (XPS)
  • Scanning probe microscopy (AFM)
  • Scanning acoustic microscopy (SAM)

Element analytics

XRD Bruker AXS D8 Advance
  • High-resolution ICP magnetic sector mass spectrometry (ICP-MS)
  • Optical ICP emission spectrometry (ICP-OES)
  • Glow discharge mass spectrometry (GD-MS)
  • Gas chromatograph mass spectrometry
  • Laser-induced breakdown spectroscopy (LIBS)
  • Residual gas analyzer (RGA)
  • X-ray diffraction (XRD)


Electrical characterization

  • Resistance and I-V curve measurement (4-point method, eddy current)
  • Characterization of electrical microprobes
  • Lock-in thermography (LIT)
  • Magnetic field imaging (MFI)

Optical characterization

Spektroskopie Spektrometrie Photovoltaik
© © FH Südwestfalen/Bernd Ahrens
Solar cell under a µ-Raman spectrometer.
  • UV-Vis-NIR fluorescence spectrometer
  • Fourier transform infrared spectrometer (FTIR)
  • Raman spectrometer (micro and macro Raman)
  • Spectral ellipsometer
  • Nano- and femtosecond laser systems for preparation