Our clients receive a unique and comprehensive offer for failure analysis and material characterisation. Grouped together in a single centre to save time and costs, run by a committed and service-orientated team, which has excellent knowledge of material-induced problems in microelectronics. In addition there are top level technical facilities - the Fraunhofer IMWS has the most comprehensive equipment for microstructure elucidation within the Fraunhofer community.

Non-destructive defect localisation

  • Scanning acoustic microscopy (MHz, GHz)
  • Lock-in and pulse-phase thermography
  • X-ray analysis and 3D tomography

Target preparation techniques

  • Delayering (CMP)
  • Metallographic preparation and chemical decapsulation
  • Use of laser beams for decapsulation and making transverse sections
  • Use of ion beams to make transverse sections and for polishing
  • Locally limited mechanical grinding method, preparation from the IC rear
  • Cryo ultramicrotome, rotating microtome

Focused ion beam method and electron microscopy

  • High-performance FIB system and chem. etching of grooves in Si, integrated IR microscope
  • Crossbeam FIB system with EDX and EBSD
  • Crossbeam FIB system for the TEM Lift-out method
  • ESEM FIB system with cryo transfer
  • Low-energy Ar FIB techniques for sample finishing for TEM tests
  • Various high-resolution SEM with electrical in-situ contact and EBIC/EBAC
  • Analytical SEM with EBSD, EDX, WDX
  • Environmental SEM (ESEM) with in-situ investigations and levels
  • TEM (200 kV) with ns-EDX and in-situ investigations
  • TEM (200 kV) with ns-EDX, EELS, NBD
  • EF-TEM (60-300 kV) with Cs correction, EDX, EELS, HAADF, STEM

Surface and trace analysis

  • Atomic force microscopy (AFM)
  • Photoelectron, UV and auger electron spectroscopy (XPS/UPS, AES)
  • Time of flight secondary ion mass spectrometry (TOF-SIMS)
  • Mass spectrometry with inductive coupled plasma (ICP-MS)
  • Contact angle measurements

Crystallography and optical spectrometry

  • Micro X-ray diffraction (XRD)
  • Electron backscatter diffraction (EBSD)
  • IR, light and fluorescent microscropy
  • UV/VIS, fluorescence and FTIR spectroscopy
  • Micro-Raman spectroscopy
  • Electro / photoluminescence
  • IR double refraction investigations (for Si components)

Surface topography and deformation

  • Mechanical profilometry
  • Laser scanning microscopy
  • White light interferometry
  • Electronic speckle pattern interferometry (ESPI)
  • Image correlation systems for the 3D forming analysis
  • Wafer bow and thickness fluctuations

Polymer characterisation

  • Dynamic differential scanning calorimetry (DSC)
  • Dynamic mechanical analysis (DMA)
  • Thermogravimetry (TGA) with FTIR
  • Thermomechanical analysis (TMA, dilatometry)
  • Thermal conductivity analysis (TCA, laser flash)
  • Rheometry

Mechanical testing and evaluation

  • Static and dynamic material test machines up into the mN load range
  • Nanoindentation (T-dependent) and micro hardness test
  • Tension and shear tester for microelectronic interconnection technology
  • Individualized MEMS, piezo-driven fatigue tests and wafer contact tests
  • MEMS analysis including laser vibrometry, stroboscope video microscopy and white light interferometry
  • Electrical test station, parameter analysis
  • High throughput, thermal shock, humidity and vibration tests
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The transmission electron microscope Titan G2 60-300 made by the FEI Company.