Frank Altmann

Profil

Frank Altmann, Leiter Geschäftsfeld Werkstoffe und Bauelemente der Elektronik

Forschungsschwerpunkte

 

  • Physikalische Fehleranalyse und Technologiebewertung von Si-basierten Halbleitertechnologien
  • Degradation von GaAs- und GaN-basierten High Electron Mobility Transistoren
  • Zielpräparationstechniken basierend auf fokussierender Ionenstrahltechnik
  • Rasterelektronenmikroskopische Verfahren zur Defektlokalisierung in integrierten Schaltungen
  • Fehlerdiagnostikverfahren für 3D-integrierte mikroelektronische Bauelemente
  • Charakterisierung von organischen Halbleiterbauelementen und LEDs

 

 

Werdegang

 

Wissenschaftlicher Werdegang

 

2019 bis heute

Leiter des Geschäftsfelds »Werkstoffe und Bauelemente der Elektronik«, Fraunhofer-Institut für Mikrostruktur von Werkstoffen und Systemen IWMS, Halle (Saale)

2010 bis heute

Stellvertretender Leiter des Geschäftsbereichs »Komponenten in der Mikroelektronik und Mikrosystemtechnik«, Fraunhofer-Institut für Mikrostruktur von Werkstoffen und Systemen IWMS, Halle (Saale)

2007 bis heute

Dozent an der Fachhochschule Merseburg im Masterstudiengang »Mechatronik, Wirtschaftsingenieurwesen, Physikalische Technik«, Veranstaltungen: »Einführung in die Mikrosystemtechnik«,»Design, Zuverlässigkeit und Diagnose von Mikrosystemen«

2006 bis heute

Gruppenleiter »Diagnostik von Halbleitertechnologien«, Fraunhofer-Institut für Mikrostruktur von Werkstoffen und Systemen IWMS, Halle (Saale)

2001-2006

Projektleiter in der Gruppe »Diagnostik von Halbleitertechnologien«, Fraunhofer-Institut für Mikrostruktur von Werkstoffen und Systemen IWMS, Halle (Saale)

1997-2001

Wissenschaftlicher Mitarbeiter in der Gruppe »Diagnostik von Halbleitertechnologien«, Fraunhofer-Institut für Mikrostruktur von Werkstoffen und Systemen IMWS, Halle (Saale)

1991-1996

Studium der Physik (Diplom Physiker) an der Technischen Universität Dresden, Thema der Diplomarbeit: »Messung der mechanischen Belastung in Mikrobauteilen mit konvergenter Beugung in TEM«, in Kooperation mit dem Fraunhofer IWMH, 1996

 

 

Preise und Auszeichnungen

 

2016

Best Paper ESREF 2016 Mikael Broas et. al. »Correlation of gate leakage and local strain distribution in GaN/AlGaN HEMT   structures« 22.09.2016, Halle (Saale)

2015

Hugo-Junkers-Preis »Fehlerdetektion in höchstintegrierten mikroelektronischen Systemen mittels Lock-in-Thermographie«, Merseburg

2014

Best Paper ESREF 2014 Michél Simon-Najasek et.al. »Advanced FIB sample preparation techniques for high resolution TEM investigations of HEMT device structures« 02.10.2014, Berlin

2014

Outstanding Paper at 40th International Symposium for Testing and Failure Analysis 2014 Jörg Jatzkowski et.al. »Localization of weak points in thin dielectric layers by electron beam absorbed current (EBAC) imaging«, Houston, Texas/USA

2012

Outstanding Paper at 37th International Symposium for Testing and Failure Analysis (ISTFA 2011) R. Schlangen et. al. »Use of lock-in thermography for non-destructive 3D defect localization on system in package and stacked-die technology« 12.11.2012, Phoenix, AZ, USA

2010

Best Session Paper Award der Electronic Components and Technology Conference ECTC 2010 Michael Krause et. al. »Characterization and failure analysis of TSV interconnects: From non-destructive defect localization to material analysis with nanometer resolution«

 

Publikationen

Jahr

Titel

Veröffentlicht in

Autoren

2017  3D Localization of liner breakdown´s within Cu filled TSVs by backside LIT and PEM. ASM International; 43rd International Symposium for Testing and Failure Analysis Altmann, F.; Grosse, C.; De Wolf, I. Brand, S.
2016  Innovative failure analysis techniques for 3-D packaging developments.  IEEE design & test 33 Altmann, F.; Petzold, M.
2015  Innovative Material Diagnostics Methods for Through Silicon Via 266 Technologies. Microelectronic Packaging in the 21st Century Altmann, F.; Brand, S.; Höche, T.; Krause, M.; Petzold, M.
2015  Failure analysis strategies for multistacked memory devices with TSV interconnects ASM International; 43rd International Symposium for Testing and Failure Analysis Altmann, F.; Grosse, C.; Naumann, F.; Beyersdorfer, J.; Veches, T.
2014  Site-specific metrology, inspection, and failure analysis of three-dimensional interconnects using focused ion beam technology Journal of Micro/Nanolithography, MEMS and MOEMS 13 Altmann, F.; Young, R. J.
2014  Innovative material diagnostics methods for through silicon via technologies  Proc. of Microelectronic Packaging in the 21st Century Altmann, F.; Brand, S.; Höche, T.; Krause, M.; Petzold, M.
2012  Emerging techniques for 3-D integrated system-in-package failure diagnostics Electronic Device Failure Analysis 14 Altmann, F; Petzold, M.
2012  Enhanced failure analysis on open TSV interconnects ISTFA Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis Altmann, F; Schmidt, C; Beyersdorfer, J; Simon-Najasek, M; Grosse, C.
2012  Cross Section Analysis of Cu Filled TSVs Based On High Throughput Plasma-FIB Milling ISTFA Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis Altmann, F; Beyersdorfer, J; Schischka, J; Krause, M.
2011  Advanced FIB Sample Preparation for High Performance TEM Analysis  Microsc. Microanal. 17 Altmann, F; Salzer, R; Simon, M; Huebner, S; Grosse, C; Graff, A.
2011  Failure diagnostics for 3D system integration technologies in microelectronics Electrochemical Society -ECS-: 218th ECS meeting abstracts 2010 Altmann, F; Schmidt, C; Brand, S; Czurratis, P; Petzold, M.
2010  Characterization and failure analysis of 3D Integrated semiconductor devices – novel tools for fault isolation, target preparation and high resolution material analysis ASM International; 36th International Symposium for Testing and Failure Analysis Altmann, F; Petzold, M; Schmidt, C; Salzer, R; Cassidy, C; Tesch, P.
2010  A novel method for solar cell characterization combining electron beam induced current imaging (EBIC) and focused ion beam techniques (FIB)  Proc. of 25th European Photovoltaic Solar Energy Conference and Exhibition EU PVSEC Altmann, F.; Schischka, J.; Van Ngo, V.; Stone, S.; Kwakman, L.; Lehmann, R.
2010  Combined electron beam induced current imaging (EBIC) and focused ion beam (FIB) techniques for thin film solar cell characterization ASM International; 36th International Symposium for Testing and Failure Analysis Altmann, F; Schischka, J; Ngo, V; Stone, V; Kwakman, L. Tz; Lehmann, R;

Paper als Coautor

Jahr

Titel

Veröffentlicht in

Autoren

2017  Acoustic and Photoacoustic inspection of Through-Silicon Vias in the GHz-frequency band ASM International, Electronic Device Failure Analysis Society Brand, S.; Kögel, S.;  Altmann, F.; DeWolf, I.; Khaled, A.; Moore, M. J.; Strohm, E. M.; Kolios, C.
2017  Exploring the thermal limit of GaN power devices under extreme overload conditions.  Microelectronics reliability 76-77 Pribahsnik, F.P.; Nelhiebel, M.; Mataln, M.; Bernardoni, M.; Prechtl, G.; Altmann, F.; Poppitz, D.; Lindemann, A.
2017  High resolution physical analysis of ohmic contact formation at GaN – HEMT devices  Microelectronics reliability 76-77 Graff, A.; Simon-Najasek, M.; Altmann, F.; Kuzmik, J.; Gregušová, D.; Hascik, S.; Jung, H.; Baur, T.; Grünenpütt, J.; Blanck, H.
2016  Reliability evaluation of Si-dies due to assembly issues.  Microelectronics reliability 64 Naumann, F.; Gottschalk, V.; Burchard, B.; Altmann, F.
2016  Correlation of gate leakage and local strain distribution in GaN/AlGaN HEMT structures. Microelectronics reliability 64 Broas, M.; Graff, A.; Simon-Najasek, M.; Poppitz, D.; Altmann, F.; Jung, H.; Blanck, H.
2016  Detection and analysis of stress-induced voiding in Al-power lines by acoustic GHz-microscopy. Microelectronics reliability 64 Brand, S.; Simon-Najasek, M.; Kögel, M.; Jatzkowski, J.; Portius, R.; Altmann, F.
2016  Magnetic field and current density imaging using off-line lock-in analysis. Microelectronics reliability 64 Kögel, M.; Altmann, F.; Tismer, S.; Brand, S.
2016  Novel failure mode of chip corrosion at automotive HALL sensor devices under multiple stress conditions. Microelectronics reliability 64 Simon-Najasek, M.; Lorenz, G.; Lindner, A.; Altmann, F.
2014  Advanced FIB sample preparation techniques for high resolution TEM investigations of HEMT structures Microelectronics Reliability 9-10 Simon-Najasek, M.; Huebner, S.; Altmann, F.; Graff, A.
2014  Localization of weak points in thin dielectric layers by Electron Beam Absorbed Current (EBAC) imaging. Electronic Device Failure Analysis Society Jatzkowski, J.; Simon-Najasek, M.; Altmann, F.
2013  Sample preparation strategies for fast and effective failure analysis of 3D devices Proc. of 39th International Symposium for Testing and Failure Analysis Kwakman, L.; Straw, M.; Coustillier, G.; Sentis, M.; Beyersdorfer, J.; Schischka, J.; Naumann, F.; Altmann, F.
2012  Enhanced Comparison of Lock-in Thermography and Magnetic Microscopy for 3D defect localization of System in Packages Proc. of 38th International Symposium for Testing and Failure Analysis Schmidt, C; Altmann, F; Vallett, D.
2012  Novel techniques for dopant contrast analysis on real IC structures Microelectronics Reliability 52 Jatzkowski, J; Simon-Najasek, M; Altmann, F.
2012  A new Technique for non-invasive Short-Localization in thin dielectric Layers by Electron Beam Absorbed Current (EBAC) Imaging Proc. of 38th International Symposium for Testing and Failure Analysis Simon-Najasek, M; Jatzkowski, J; Grosse, C; Altmann, F.
2011  Use of lock-in thermography for non-destructive 3D defect localization on system in package and stacked-die technology Proc. of 37th International Symposium for Testing and Failure Analysis Schlangen, R.; Motegi, S.; Nagatomo, T.; Schmidt, C.; Altmann, F.; Murakami, H.; Hollingshead, S.
2011  Quantitative phase shift analysis for 3D defect localization using Lock-in Thermography Proc. of 37th International Symposium for Testing and Failure Analysis Schmidt, C.; Altmann, F.
  Application of lock-in thermography for failure analysis in integrated circuits using quantitative phase shift analysis Materials Science & Engineering Schmidt, C.; Altmann, F.; Breitenstein, O.
2011  Characterization and failure analysis of TSV interconnects: from non-destructive defect localization to material analysis with nanometer resolution Proc. of 61st Electronic Components & Technology Conf. Krause, M.; Altmann, F.; Schmidt, C.; Brand, S.; Petzold, M.; Malta, D.; Temple, D.
2010  Non-destructive defect depth determination at fully packaged and stacked die devices using Lock-in Thermography Proceedings of 17th International Symposium on the Physical and Failure Analysis of integrated Circuits Schmidt, C; Altmann, F; Schlangen, R; Deslandes, H.