Frank Altmann - Fraunhofer IMWS

Profil

Frank Altmann, Leiter Geschäftsfeld Werkstoffe und Bauelemente der Elektronik

Forschungsschwerpunkte

Physikalische Fehleranalyse und Technologiebewertung von Si-basierten Halbleitertechnologien
Degradation von GaAs- und GaN-basierten High Electron Mobility Transistoren
Zielpräparationstechniken basierend auf fokussierender Ionenstrahltechnik
Rasterelektronenmikroskopische Verfahren zur Defektlokalisierung in integrierten Schaltungen
Fehlerdiagnostikverfahren für 3D-integrierte mikroelektronische Bauelemente
Charakterisierung von organischen Halbleiterbauelementen und LEDs

Werdegang

Wissenschaftlicher Werdegang

2019 bis heute

Leiter des Geschäftsfelds »Werkstoffe und Bauelemente der Elektronik«, Fraunhofer-Institut für Mikrostruktur von Werkstoffen und Systemen IWMS, Halle (Saale)

2010 bis heute

Stellvertretender Leiter des Geschäftsbereichs »Komponenten in der Mikroelektronik und Mikrosystemtechnik«, Fraunhofer-Institut für Mikrostruktur von Werkstoffen und Systemen IWMS, Halle (Saale)

2007 bis heute

Dozent an der Fachhochschule Merseburg im Masterstudiengang »Mechatronik, Wirtschaftsingenieurwesen, Physikalische Technik«, Veranstaltungen: »Einführung in die Mikrosystemtechnik«,»Design, Zuverlässigkeit und Diagnose von Mikrosystemen«

2006 bis heute

Gruppenleiter »Diagnostik von Halbleitertechnologien«, Fraunhofer-Institut für Mikrostruktur von Werkstoffen und Systemen IWMS, Halle (Saale)

2001-2006

Projektleiter in der Gruppe »Diagnostik von Halbleitertechnologien«, Fraunhofer-Institut für Mikrostruktur von Werkstoffen und Systemen IWMS, Halle (Saale)

1997-2001

Wissenschaftlicher Mitarbeiter in der Gruppe »Diagnostik von Halbleitertechnologien«, Fraunhofer-Institut für Mikrostruktur von Werkstoffen und Systemen IMWS, Halle (Saale)

1991-1996

Studium der Physik (Diplom Physiker) an der Technischen Universität Dresden, Thema der Diplomarbeit: »Messung der mechanischen Belastung in Mikrobauteilen mit konvergenter Beugung in TEM«, in Kooperation mit dem Fraunhofer IWMH, 1996

Preise und Auszeichnungen

2016

Best Paper ESREF 2016 Mikael Broas et. al. »Correlation of gate leakage and local strain distribution in GaN/AlGaN HEMT structures« 22.09.2016, Halle (Saale)

2015

Hugo-Junkers-Preis »Fehlerdetektion in höchstintegrierten mikroelektronischen Systemen mittels Lock-in-Thermographie«, Merseburg

2014

Best Paper ESREF 2014 Michél Simon-Najasek et.al. »Advanced FIB sample preparation techniques for high resolution TEM investigations of HEMT device structures« 02.10.2014, Berlin

2014

Outstanding Paper at 40th International Symposium for Testing and Failure Analysis 2014 Jörg Jatzkowski et.al. »Localization of weak points in thin dielectric layers by electron beam absorbed current (EBAC) imaging«, Houston, Texas/USA

2012

Outstanding Paper at 37th International Symposium for Testing and Failure Analysis (ISTFA 2011) R. Schlangen et. al. »Use of lock-in thermography for non-destructive 3D defect localization on system in package and stacked-die technology« 12.11.2012, Phoenix, AZ, USA

2010

Best Session Paper Award der Electronic Components and Technology Conference ECTC 2010 Michael Krause et. al. »Characterization and failure analysis of TSV interconnects: From non-destructive defect localization to material analysis with nanometer resolution«

Publikationen

Jahr	Titel	Veröffentlicht in	Autoren
2017	3D Localization of liner breakdown´s within Cu filled TSVs by backside LIT and PEM.	ASM International; 43rd International Symposium for Testing and Failure Analysis	Altmann, F.; Grosse, C.; De Wolf, I. Brand, S.
2016	Innovative failure analysis techniques for 3-D packaging developments.	IEEE design & test 33	Altmann, F.; Petzold, M.
2015	Innovative Material Diagnostics Methods for Through Silicon Via 266 Technologies.	Microelectronic Packaging in the 21st Century	Altmann, F.; Brand, S.; Höche, T.; Krause, M.; Petzold, M.
2015	Failure analysis strategies for multistacked memory devices with TSV interconnects	ASM International; 43rd International Symposium for Testing and Failure Analysis	Altmann, F.; Grosse, C.; Naumann, F.; Beyersdorfer, J.; Veches, T.
2014	Site-specific metrology, inspection, and failure analysis of three-dimensional interconnects using focused ion beam technology	Journal of Micro/Nanolithography, MEMS and MOEMS 13	Altmann, F.; Young, R. J.
2014	Innovative material diagnostics methods for through silicon via technologies	Proc. of Microelectronic Packaging in the 21st Century	Altmann, F.; Brand, S.; Höche, T.; Krause, M.; Petzold, M.
2012	Emerging techniques for 3-D integrated system-in-package failure diagnostics	Electronic Device Failure Analysis 14	Altmann, F; Petzold, M.
2012	Enhanced failure analysis on open TSV interconnects	ISTFA Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis	Altmann, F; Schmidt, C; Beyersdorfer, J; Simon-Najasek, M; Grosse, C.
2012	Cross Section Analysis of Cu Filled TSVs Based On High Throughput Plasma-FIB Milling	ISTFA Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis	Altmann, F; Beyersdorfer, J; Schischka, J; Krause, M.
2011	Advanced FIB Sample Preparation for High Performance TEM Analysis	Microsc. Microanal. 17	Altmann, F; Salzer, R; Simon, M; Huebner, S; Grosse, C; Graff, A.
2011	Failure diagnostics for 3D system integration technologies in microelectronics	Electrochemical Society -ECS-: 218th ECS meeting abstracts 2010	Altmann, F; Schmidt, C; Brand, S; Czurratis, P; Petzold, M.
2010	Characterization and failure analysis of 3D Integrated semiconductor devices – novel tools for fault isolation, target preparation and high resolution material analysis	ASM International; 36th International Symposium for Testing and Failure Analysis	Altmann, F; Petzold, M; Schmidt, C; Salzer, R; Cassidy, C; Tesch, P.
2010	A novel method for solar cell characterization combining electron beam induced current imaging (EBIC) and focused ion beam techniques (FIB)	Proc. of 25th European Photovoltaic Solar Energy Conference and Exhibition EU PVSEC	Altmann, F.; Schischka, J.; Van Ngo, V.; Stone, S.; Kwakman, L.; Lehmann, R.
2010	Combined electron beam induced current imaging (EBIC) and focused ion beam (FIB) techniques for thin film solar cell characterization	ASM International; 36th International Symposium for Testing and Failure Analysis	Altmann, F; Schischka, J; Ngo, V; Stone, V; Kwakman, L. Tz; Lehmann, R;

Paper als Coautor

Jahr	Titel	Veröffentlicht in	Autoren
2017	Acoustic and Photoacoustic inspection of Through-Silicon Vias in the GHz-frequency band	ASM International, Electronic Device Failure Analysis Society	Brand, S.; Kögel, S.; Altmann, F.; DeWolf, I.; Khaled, A.; Moore, M. J.; Strohm, E. M.; Kolios, C.
2017	Exploring the thermal limit of GaN power devices under extreme overload conditions.	Microelectronics reliability 76-77	Pribahsnik, F.P.; Nelhiebel, M.; Mataln, M.; Bernardoni, M.; Prechtl, G.; Altmann, F.; Poppitz, D.; Lindemann, A.
2017	High resolution physical analysis of ohmic contact formation at GaN – HEMT devices	Microelectronics reliability 76-77	Graff, A.; Simon-Najasek, M.; Altmann, F.; Kuzmik, J.; Gregušová, D.; Hascik, S.; Jung, H.; Baur, T.; Grünenpütt, J.; Blanck, H.
2016	Reliability evaluation of Si-dies due to assembly issues.	Microelectronics reliability 64	Naumann, F.; Gottschalk, V.; Burchard, B.; Altmann, F.
2016	Correlation of gate leakage and local strain distribution in GaN/AlGaN HEMT structures.	Microelectronics reliability 64	Broas, M.; Graff, A.; Simon-Najasek, M.; Poppitz, D.; Altmann, F.; Jung, H.; Blanck, H.
2016	Detection and analysis of stress-induced voiding in Al-power lines by acoustic GHz-microscopy.	Microelectronics reliability 64	Brand, S.; Simon-Najasek, M.; Kögel, M.; Jatzkowski, J.; Portius, R.; Altmann, F.
2016	Magnetic field and current density imaging using off-line lock-in analysis.	Microelectronics reliability 64	Kögel, M.; Altmann, F.; Tismer, S.; Brand, S.
2016	Novel failure mode of chip corrosion at automotive HALL sensor devices under multiple stress conditions.	Microelectronics reliability 64	Simon-Najasek, M.; Lorenz, G.; Lindner, A.; Altmann, F.
2014	Advanced FIB sample preparation techniques for high resolution TEM investigations of HEMT structures	Microelectronics Reliability 9-10	Simon-Najasek, M.; Huebner, S.; Altmann, F.; Graff, A.
2014	Localization of weak points in thin dielectric layers by Electron Beam Absorbed Current (EBAC) imaging.	Electronic Device Failure Analysis Society	Jatzkowski, J.; Simon-Najasek, M.; Altmann, F.
2013	Sample preparation strategies for fast and effective failure analysis of 3D devices	Proc. of 39th International Symposium for Testing and Failure Analysis	Kwakman, L.; Straw, M.; Coustillier, G.; Sentis, M.; Beyersdorfer, J.; Schischka, J.; Naumann, F.; Altmann, F.
2012	Enhanced Comparison of Lock-in Thermography and Magnetic Microscopy for 3D defect localization of System in Packages	Proc. of 38th International Symposium for Testing and Failure Analysis	Schmidt, C; Altmann, F; Vallett, D.
2012	Novel techniques for dopant contrast analysis on real IC structures	Microelectronics Reliability 52	Jatzkowski, J; Simon-Najasek, M; Altmann, F.
2012	A new Technique for non-invasive Short-Localization in thin dielectric Layers by Electron Beam Absorbed Current (EBAC) Imaging	Proc. of 38th International Symposium for Testing and Failure Analysis	Simon-Najasek, M; Jatzkowski, J; Grosse, C; Altmann, F.
2011	Use of lock-in thermography for non-destructive 3D defect localization on system in package and stacked-die technology	Proc. of 37th International Symposium for Testing and Failure Analysis	Schlangen, R.; Motegi, S.; Nagatomo, T.; Schmidt, C.; Altmann, F.; Murakami, H.; Hollingshead, S.
2011	Quantitative phase shift analysis for 3D defect localization using Lock-in Thermography	Proc. of 37th International Symposium for Testing and Failure Analysis	Schmidt, C.; Altmann, F.
	Application of lock-in thermography for failure analysis in integrated circuits using quantitative phase shift analysis	Materials Science & Engineering	Schmidt, C.; Altmann, F.; Breitenstein, O.
2011	Characterization and failure analysis of TSV interconnects: from non-destructive defect localization to material analysis with nanometer resolution	Proc. of 61st Electronic Components & Technology Conf.	Krause, M.; Altmann, F.; Schmidt, C.; Brand, S.; Petzold, M.; Malta, D.; Temple, D.
2010	Non-destructive defect depth determination at fully packaged and stacked die devices using Lock-in Thermography	Proceedings of 17th International Symposium on the Physical and Failure Analysis of integrated Circuits	Schmidt, C; Altmann, F; Schlangen, R; Deslandes, H.